Signal integrity : from high speed to radiofrequency applications /

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Bibliographic Details
Main Author: Ndagijimana, Fabien
Corporate Author: ProQuest (Firm)
Format: Electronic eBook
Language:English
Published: London, UK : Hoboken, NJ, USA : ISTE ; Wiley, [2014]
Series:Focus nanoscience and nanotechnology series.
Subjects:
Online Access:Connect to this title online (unlimited simultaneous users allowed; 325 uses per year)

MARC

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100 1 |a Ndagijimana, Fabien.  |0 http://id.loc.gov/authorities/names/nb2014013913 
245 1 0 |a Signal integrity :  |b from high speed to radiofrequency applications /  |c Fabien Ndagijimana. 
264 1 |a London, UK :  |b ISTE ;  |a Hoboken, NJ, USA :  |b Wiley,  |c [2014] 
264 4 |c ©2014 
300 |a 1 online resource (xii, 160 pages). 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Focus series 
504 |a Includes bibliographical references and index. 
505 0 0 |a Machine generated contents note:   |g 1.1.  |t Propagation issues in interconnects --   |g 1.1.1.  |t Evolution of digital circuits --   |g 1.1.2.  |t Evolution of signals in interconnects --   |g 1.1.3.  |t Propagation time on networks --   |g 1.1.4.  |t Propagation delay in integrated circuits --   |g 1.1.5.  |t Spectral analysis of signals --   |g 1.2.  |t Behavior of components at high frequencies --   |g 1.2.1.  |t Contact wire behavior --   |g 1.2.2.  |t Resistance behavior at radiofrequencies (RF) --   |g 1.2.3.  |t RF inductance behavior --   |g 1.2.4.  |t Capacitance behavior at RF --   |g 1.2.5.  |t Effects of losses due to conductors: skin effect --   |g 1.3.  |t Effect on transmission of signals on interconnects --   |g 1.3.1.  |t Filtering by transmission channel --   |g 1.3.2.  |t Degradation of rise time in a limited-bandwidth channel --   |g 1.3.3.  |t Example of a first-order low-pass RC filter --   |g 1.3.4.  |t Effects of resistive losses from skin effect --   |g 1.3.5.  |t Rise time in cascading circuits --   |g 1.3.6.  |t Transmission quality criteria: eye diagram --   |g 1.4.  |t Measurement of rise time --   |g 1.4.1.  |t Different definitions of rise time --   |g 1.4.2.  |t Measurement principle --   |g 1.4.3.  |t Effect of measuring sensor --   |g 1.5.  |t Conclusion --   |g 2.1.  |t Global modeling of signal integrity --   |g 2.1.1.  |t ICEM and ICIM models --   |g 2.1.2.  |t IBIS models --   |g 2.1.3.  |t I/V characteristics of buffers --   |g 2.1.4.  |t IN characteristics of the IBIS model --   |g 2.2.  |t RC interconnect model --   |g 2.2.1.  |t RC model --   |g 2.2.2.  |t Elmore constant --   |g 2.3.  |t Capacitive and inductive modeling --   |g 2.3.1.  |t Capacitive modeling --   |g 2.3.2.  |t Inductive modeling --   |g 2.4.  |t LC line modeling --   |g 2.5.  |t Application to electronic packages and MCM --   |g 2.5.1.  |t Different types of electronic packages --   |g 2.5.2.  |t Multichip modules --   |g 2.5.3.  |t LC modeling of packages --   |g 2.5.4.  |t 2.5D and 3D electromagnetic simulations --   |g 2.6.  |t Conclusion --   |g 3.1.  |t Why control impedance? --   |g 3.1.1.  |t Effect of interconnect length --   |g 3.1.2.  |t Classification of interconnects by the signal carried --   |g 3.2.  |t Influence of rise time on signal degradation --   |g 3.3.  |t Model of a controlled impedance interconnect --   |g 3.3.1.  |t Characteristic impedance: definition --   |g 3.3.2.  |t Configuration of controlled impedance interconnects --   |g 3.4.  |t Interconnects on PCBs --   |g 3.4.1.  |t Controlled impedance on PCB --   |g 3.4.2.  |t Transition between lines and discontinuity --   |g 3.4.3.  |t Extraction of values from equivalent schema --   |g 3.5.  |t Impedance control for a microstrip configuration --   |g 3.5.1.  |t Effect of effective permittivity --   |g 3.5.2.  |t Limitations on a typical digital circuit --   |g 3.5.3.  |t Effect of ribbon thickness or protective resin --   |g 3.6.  |t Analysis of propagation in interconnects --   |g 3.6.1.  |t Reflection and transmission on termination --   |g 3.6.2.  |t Reflection and transmission during an impedance break --   |g 3.6.3.  |t Reflection and transmission on a bus --   |g 3.7.  |t Effect on data bus configuration --   |g 3.8.  |t Application to clock distribution --   |g 3.9.  |t Conclusion --   |g 4.1.  |t Transmission line model --   |g 4.1.1.  |t Modes of propagation on lines --   |g 4.2.  |t Propagation modes related to substrate --   |g 4.2.1.  |t Quasi-TEM mode --   |g 4.2.2.  |t Skin-effect mode --   |g 4.2.3.  |t Slow wave mode --   |g 4.2.4.  |t Transition zone --   |g 4.3.  |t Equation of propagation on transmission lines --   |g 4.3.1.  |t Propagation equation --   |g 4.3.2.  |t Input impedance --   |g 4.3.3.  |t Interconnect behavior according to length and loads --   |g 4.3.4.  |t Case of electrically short lines --   |g 4.4.  |t Conclusion --   |g 5.1.  |t Definition of measured parameters --   |g 5.1.1.  |t Reflection and transmission --   |g 5.1.2.  |t Reflection coefficient and SWR on interconnects --   |g 5.2.  |t S-parameters principle --   |g 5.2.1.  |t Definitions --   |g 5.2.2.  |t Input impedance of a circuit terminated by an impedance --   |g 5.3.  |t Measurement of S parameters --   |g 5.3.1.  |t Standard calibrations of a vectorial analyzer --   |g 5.3.2.  |t Short-open-load-thru (SOLT) calibration --   |g 5.3.3.  |t Thru-Reflect-Line (TRL) calibration --   |g 5.3.4.  |t One-port measurement technique --   |g 5.4.  |t Measurement of characteristic line impedance --   |g 5.4.1.  |t Short-circuit and open-circuit method --   |g 5.4.2.  |t RO-loaded line method --   |g 5.4.3.  |t Equivalent line based on S parameters --   |g 5.5.  |t Measurement of line capacitance --   |g 5.5.1.  |t Short-circuit and open-circuit measurement method --   |g 5.5.2.  |t Loaded line measurement method --   |g 5.6.  |t Components on PCB and de-embedding techniques --   |g 5.6.1.  |t Impedance measurement on PCB --   |g 5.6.2.  |t T and C series matrices --   |g 5.6.3.  |t ABCD matrix of a transmission line --   |g 5.6.4.  |t De-embedding procedure --   |g 5.7.  |t Characterization of dielectric materials for interconnects --   |g 5.7.1.  |t Metal-insulating material-metal capacity method for insulating materials in integrated technologies --   |g 5.7.2.  |t Effective permittivity of a transmission line --   |g 5.7.3.  |t Case of microribbon, tri-plate or coplanar lines --   |g 5.8.  |t Conclusion --   |g 6.1.  |t Principle of TDR --   |g 6.2.  |t Reflection and transmission of voltage --   |g 6.2.1.  |t Observable voltages --   |g 6.2.2.  |t Effects of multiple reflections in high-speed circuits --   |g 6.3.  |t Measurementof characteristic, impedance --   |g 6.3.1.  |t Impedance measurement with an impulse generator --   |g 6.3.2.  |t Impedance measurement with an echelon --   |g 6.3.3.  |t Case of cascaded impedances --   |g 6.4.  |t Reflection on reactive loads --   |g 6.5.  |t Extraction of equivalent schemas --   |g 6.5.1.  |t Definition of equivalent schema --   |g 6.5.2.  |t Extraction of an inductive discontinuity or component --   |g 6.5.3.  |t Case of a capacitive discontinuity or component --   |g 6.5.4.  |t Case of a series inductance and parallel capacitance --   |g 6.6.  |t Discontinuities in cascade --   |g 6.6.1.  |t Spatial resolution --   |g 6.6.2.  |t Example of inductance and capacitance extraction --   |g 6.7.  |t Conclusion --   |g 7.1.  |t Coupling and interferences due to substrate --   |g 7.1.1.  |t ICEM model for substrate coupling --   |g 7.1.2.  |t Guard ring and insulation well --   |g 7.2.  |t Theory of coupling between lines --   |g 7.2.1.  |t Interline coupling model --   |g 7.2.2.  |t Coupling signals at endings --   |g 7.2.3.  |t Model of coupling in interconnects on PCB --   |g 7.3.  |t Application to high-speed cables, buses and connectors --   |g 7.3.1.  |t Stresses in high-speed buses --   |g 7.3.2.  |t Standardization of data transmission cables --   |g 7.3.3.  |t Categories of high-speed ethernet systems --   |g 7.4.  |t Conclusion. 
533 |a Electronic reproduction.  |b Ann Arbor, MI  |n Available via World Wide Web. 
588 0 |a Online resource; title from PDF title page (Wiley, viewed July 15, 2014). 
650 0 |a Radio frequency  |x Industrial applications. 
650 0 |a Radio circuits.  |0 http://id.loc.gov/authorities/subjects/sh85110463 
650 0 |a Radio frequency.  |0 http://id.loc.gov/authorities/subjects/sh85110472 
650 0 |a Signal integrity (Electronics)  |0 http://id.loc.gov/authorities/subjects/sh2009000153 
650 7 |a Radio frequency.  |2 fast  |0 (OCoLC)fst01087309 
650 7 |a Radio circuits.  |2 fast  |0 (OCoLC)fst01087290 
650 7 |a Signal integrity (Electronics)  |2 fast  |0 (OCoLC)fst01747327 
710 2 |a ProQuest (Firm)  |0 http://id.loc.gov/authorities/names/n2007068018 
776 0 8 |i Print version:  |a Ndagijimana, Fabien.  |t Signal integrity.  |d London, England : iSTE ; Hoboken, NJ : Wiley, ©2014  |z 1848215509  |w (OCoLC)855848052 
830 0 |a Focus nanoscience and nanotechnology series.  |0 http://id.loc.gov/authorities/names/no2014024529 
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